[G-1-2] Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper Interconnects

K. Higashi、H. Yamaguchi、T. Yosho、A. Sakata、S. Omoto、S. Yamashita、T. Fujimaki、Y. Enomoto、N. Matsunaga、H. Shibata (1.Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、3.System LSI Division I, Semiconductor Company, Toshiba Corporation、4.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)

https://doi.org/10.7567/SSDM.2006.G-1-2