[G-1-2] Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper Interconnects

K. Higashi, H. Yamaguchi, T. Yosho, A. Sakata, S. Omoto, S. Yamashita, T. Fujimaki, Y. Enomoto, N. Matsunaga, H. Shibata (1.Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 3.System LSI Division I, Semiconductor Company, Toshiba Corporation, 4.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)

https://doi.org/10.7567/SSDM.2006.G-1-2