[G-1-4] A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65 nm Technology

H. C. Lee、S. J. Joo、I. C. Baek、C. Shim、J. H. Hong、J. W. Han、K. H. Kim、Y. M. Kim (1.Advanced nano-tech development Division, Dongbu Electronics、2.School of Electrical Engineering, Hongik University)

https://doi.org/10.7567/SSDM.2006.G-1-4