A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65 nm Technology

H. C. Lee; S. J. Joo; I. C. Baek; C. Shim; J. H. Hong; J. W. Han; K. H. Kim; Y. M. Kim

doi:https://doi.org/10.7567/SSDM.2006.G-1-4

[G-1-4] A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65 nm Technology

H. C. Lee, S. J. Joo, I. C. Baek, C. Shim, J. H. Hong, J. W. Han, K. H. Kim, Y. M. Kim (1.Advanced nano-tech development Division, Dongbu Electronics, 2.School of Electrical Engineering, Hongik University)

https://doi.org/10.7567/SSDM.2006.G-1-4

2006 International Conference on Solid State Devices and Materials

[G-1-4] A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65 nm Technology