[H-1-5] Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs

Tejas Krishnamohan、Donghyun Kim、Christoph Jungemann、Yoshio Nishi、Krishna C. Saraswat (1.Department of Electrical Engineering, Stanford University、2.University of the Armed Forces)

https://doi.org/10.7567/SSDM.2006.H-1-5