[H-10-1] Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy

Kiyotaka Miyano, Akio Kaneko, Ichiro Mizushima, Atsushi Yagishita, Kyoichi Suguro, Yoshihiko Saito, Kazuhiro Eguchi, Yoshitaka Tsunashima (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.H-10-1