[H-10-5] Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation
Benjamin Dumont, Arnaud Pouydebasque, Frederic Milesi, Kader Souifi, Frederic Boeuf, Thomas Skotnicki
(1.STMicroelectronics, 2.LPM - INSA de Lyon, Bat. Blaise Pascal, 3.Philips Semiconductors, 4.Ion Beam Services, ZI Peynier-Rousset, 5.CEA-LETI)
https://doi.org/10.7567/SSDM.2006.H-10-5
