Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation

Benjamin Dumont; Arnaud Pouydebasque; Frederic Milesi; Kader Souifi; Frederic Boeuf; Thomas Skotnicki

doi:https://doi.org/10.7567/SSDM.2006.H-10-5

[H-10-5] Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation

Benjamin Dumont、Arnaud Pouydebasque、Frederic Milesi、Kader Souifi、Frederic Boeuf、Thomas Skotnicki (1.STMicroelectronics、2.LPM - INSA de Lyon, Bat. Blaise Pascal、3.Philips Semiconductors、4.Ion Beam Services, ZI Peynier-Rousset、5.CEA-LETI)

https://doi.org/10.7567/SSDM.2006.H-10-5

2006 International Conference on Solid State Devices and Materials

[H-10-5] Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation