[H-2-4] A Full Analytical Model to evaluate Strain Induced by CESL on MOSFET Performances

F. Payet、F. Boeuf、C. Ortolland、T. Skotnicki (1.STMicroelectronics、2.Philips Semiconductors)

https://doi.org/10.7567/SSDM.2006.H-2-4