[H-2-5] 56% pMOSFETs Drive Current Enhancement from Optimized Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS

K. H. Lee、C. T. Huang、W. H. Hung、L. S. Jeng、S. F. Ting、M. L. Tseng、J. C. Wu、T. M. Shen、Osbert Cheng、C. W. Liang (1.United Microelectronics Corp. (UMC), CRD Logic Division)

https://doi.org/10.7567/SSDM.2006.H-2-5