A Continuous, Explicit Drain-Current Model for Asymmetric Undoped Double-Gate MOSFETs

Z. M. Zhu; X. Zhou; K. Chandrasekaran; G. H. See; S. C. Rustagi

doi:https://doi.org/10.7567/SSDM.2006.H-7-2

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[H-7-2] A Continuous, Explicit Drain-Current Model for Asymmetric Undoped Double-Gate MOSFETs

Z. M. Zhu、X. Zhou、K. Chandrasekaran、G. H. See、S. C. Rustagi (1.School of Electrical and Electronic Engineering, Nanyang Technological University、2.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2006.H-7-2

▲