[H-7-3] Surface-Potential-Based MOS-Varactor Model for RF Applications

M. Miyake、N. Sadachika、D. Navarro、Y. Mizukane、T. Ezaki、M. Miura-Mattausch、H. J. Mattausch、T. Ohguro、T. Iizuka、M. Taguchi、S. Kumashiro、S. Miyamoto (1.Graduate School of Advanced Sciences of Matter、2.Research Center for Nanodevices and Systems, Hiroshima University、3.Semiconductor Technology Academic Research Center)

https://doi.org/10.7567/SSDM.2006.H-7-3