[H-7-3] Surface-Potential-Based MOS-Varactor Model for RF Applications

M. Miyake, N. Sadachika, D. Navarro, Y. Mizukane, T. Ezaki, M. Miura-Mattausch, H. J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, S. Miyamoto (1.Graduate School of Advanced Sciences of Matter, 2.Research Center for Nanodevices and Systems, Hiroshima University, 3.Semiconductor Technology Academic Research Center)

https://doi.org/10.7567/SSDM.2006.H-7-3