Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer

Yukio Nakabayashi; Takamitsu Ishihara; Takashi Shimizu; Junji Koga

doi:https://doi.org/10.7567/SSDM.2006.H-9-2

[H-9-2] Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer

Yukio Nakabayashi、Takamitsu Ishihara、Takashi Shimizu、Junji Koga (1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation、2.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.H-9-2

2006 International Conference on Solid State Devices and Materials

[H-9-2] Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer