The Japan Society of Applied Physics

[I-8-1] Fabrication of III-V-O-I (III-V on Insulator ) structures on Si using micro-channel epitaxy with a two-step growth technique

Masato Shichijo、Ryosho Nakane、Satoshi Sugahara、Shinichi Takagi (1.Graduate School of Frontier Science、2.School of Engineering, The Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2006.I-8-1