High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2

Akira Takashima; Yukie Nishikawa; Tatsuo Schimizu; Daisuke Matsushita; Masamichi Suzuki; Takeshi Yamaguchi; Noburu Fukushima

doi:https://doi.org/10.7567/SSDM.2006.J-1-5

[J-1-5] High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2

Akira Takashima、Yukie Nishikawa、Tatsuo Schimizu、Daisuke Matsushita、Masamichi Suzuki、Takeshi Yamaguchi、Noburu Fukushima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.J-1-5

2006 International Conference on Solid State Devices and Materials

[J-1-5] High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2