High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2

Akira Takashima; Yukie Nishikawa; Tatsuo Schimizu; Daisuke Matsushita; Masamichi Suzuki; Takeshi Yamaguchi; Noburu Fukushima

doi:https://doi.org/10.7567/SSDM.2006.J-1-5

[J-1-5] High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2

Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Daisuke Matsushita, Masamichi Suzuki, Takeshi Yamaguchi, Noburu Fukushima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.J-1-5

2006 International Conference on Solid State Devices and Materials

[J-1-5] High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2