Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications

Kazuaki NAKAJIMA; Masato KOYAMA; Tomonori AOYAMA; Akira NISHIYAMA; Kazuhiro EGUCHI; Kyoichi SUGURO

doi:https://doi.org/10.7567/SSDM.2006.J-10-1

[J-10-1] Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications

Kazuaki NAKAJIMA、Masato KOYAMA、Tomonori AOYAMA、Akira NISHIYAMA、Kazuhiro EGUCHI、Kyoichi SUGURO (1.Semiconductor Company, Toshiba Corporation、2.Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.J-10-1

2006 International Conference on Solid State Devices and Materials

[J-10-1] Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications