[J-10-2] Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs

S. Sakashita, T. Kawahara, M. Mizutani, M. Inoue, K. Mori, S. Yamanari, M. Higashi, Y. Nishida, K. Honda, N. Murata, J. Tsuchimoto, J. Yugami, K. Fujiwara, M. Yoneda (1.Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2006.J-10-2