[J-10-2] Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs

S. Sakashita、T. Kawahara、M. Mizutani、M. Inoue、K. Mori、S. Yamanari、M. Higashi、Y. Nishida、K. Honda、N. Murata、J. Tsuchimoto、J. Yugami、K. Fujiwara、M. Yoneda (1.Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2006.J-10-2