[J-3-1] High-resolution RBS analysis of Si-dielectrics interfaces

Zhao Ming、Kaoru Nakajima、Motofumi Suzuki、Kenji Kimura、Masashi Uematsu、Kazuyoshi Torii、Satoshi Kamiyama、Yasuo Nara、Heiji Watanabe、Kenji Shiraishi、Toyoshiro Chikyow、Keisaku Yamada (1.Department of Micro Engineering, Kyoto University、2.NTT Basic Research Laboratories, NTT Corporation、3.Semiconductor Leading Edge Technologies, Inc.、4.Department of Precision Science and Technology, Osaka University、5.Institute of Physics, University of Tsukuba、6.National Institute for Materials Science、7.Nanotechnology Research Laboratories, Waseda University)

https://doi.org/10.7567/SSDM.2006.J-3-1