Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET

P.D. Kirsch; M.A. Quevedo-Lopez; S. A. Krishnan; C. Krug; F. S. Aguirre; R. M. Wallace; B. H. Lee; R. Jammy

doi:https://doi.org/10.7567/SSDM.2006.J-5-1

[J-5-1] Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET

P.D. Kirsch、M.A. Quevedo-Lopez、S. A. Krishnan、C. Krug、F. S. Aguirre、R. M. Wallace、B. H. Lee、R. Jammy (1.SEMATECH、2.IBM、3.Texas Instruments、4.UT-Dallas Dept. Elect. Eng.)

https://doi.org/10.7567/SSDM.2006.J-5-1

2006 International Conference on Solid State Devices and Materials

[J-5-1] Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET