Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET

P.D. Kirsch; M.A. Quevedo-Lopez; S. A. Krishnan; C. Krug; F. S. Aguirre; R. M. Wallace; B. H. Lee; R. Jammy

doi:https://doi.org/10.7567/SSDM.2006.J-5-1

[J-5-1] Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET

P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee, R. Jammy (1.SEMATECH, 2.IBM, 3.Texas Instruments, 4.UT-Dallas Dept. Elect. Eng.)

https://doi.org/10.7567/SSDM.2006.J-5-1

2006 International Conference on Solid State Devices and Materials

[J-5-1] Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET