Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge

Hiroshi Kumagai; Masato Shichijo; Hiroto Ishikawa; Takuya Hoshii; Satoshi Sugahara; Yasutaka Uchida; Shinichi Takagi

doi:https://doi.org/10.7567/SSDM.2006.J-6-2

[J-6-2] Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge

Hiroshi Kumagai、Masato Shichijo、Hiroto Ishikawa、Takuya Hoshii、Satoshi Sugahara、Yasutaka Uchida、Shinichi Takagi (1.Graduate School of Frontier Science, The Univ. of Tokyo、2.Teikyo University of Science and Technology)

https://doi.org/10.7567/SSDM.2006.J-6-2

2006 International Conference on Solid State Devices and Materials

[J-6-2] Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge