[J-7-1] Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability

R. I. Hegde、D. H. Triyoso、S. Kalpat、S. B. Samavedam、J. K. Schaeffer、E. Luckowski、C. Capasso、D. C. Gilmer、M. Raymond、D. Roan、J. Nguyen、L. La、E. Hebert、X-D. Wang、R. Gregory、R. S. Rai、J. Jiang、T. Y. Luo、B. E. White Jr. (1.Freescale Semiconductor, Inc., Austin Silicon Technology Solutions (ASTS))

https://doi.org/10.7567/SSDM.2006.J-7-1