[J-8-1] Highly scalable and WF-tunable Ni(Pt)Si/SiON TOSI-gate CMOS devices obtained in a CMP-less integration scheme

M. Muller, G. Bidal, A. Mondot, S. Denorme, C. Fenouillet-Beranger, F. Boeuf, D. Aime, M. Rafik, P. Gouraud, T. Kormann, G. Chabanne, A. Zauner, G. Braeckelmann, S. Bonnetier, D. Barge, C. Laviron, A. Toffoli, A. Tarnowka, S. Pokrant, T. Skotnicki (1.Philips Semiconductors, 2.STMicroelectronics, 3.Freescale, 4.CEA-LETI)

https://doi.org/10.7567/SSDM.2006.J-8-1