Sub-30 nm P-channel Schottky Source/Drain FinFETs: Integration of Pt3Si FUSI Metal Gate and High-κ Dielectric

Rinus T. P. Lee; Kian-Ming Tan; Andy Eu-Jin Lim; Tsung-Yang Liow; Guo-Qiang Lo; Ganesh Samudra; Dong Zhi Chi; Yee-Chia Yeo

doi:https://doi.org/10.7567/SSDM.2006.J-8-2

[J-8-2] Sub-30 nm P-channel Schottky Source/Drain FinFETs: Integration of Pt3Si FUSI Metal Gate and High-κ Dielectric

Rinus T. P. Lee, Kian-Ming Tan, Andy Eu-Jin Lim, Tsung-Yang Liow, Guo-Qiang Lo, Ganesh Samudra, Dong Zhi Chi, Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical & Computer Engineering, National University of Singapore, 2.Institute of Materials Research and Engineering, 3.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2006.J-8-2

2006 International Conference on Solid State Devices and Materials

[J-8-2] Sub-30 nm P-channel Schottky Source/Drain FinFETs: Integration of Pt3Si FUSI Metal Gate and High-κ Dielectric