[J-8-5] Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process

F. Ootsuka, Y. Tamura, Y. Akasaka, S. Inumiya, H. Nakata, M. Ohtsuka, T. Watanabe, M kitajima, Y. Nara, K. Nakamura (1.Semiconductor Leading Edge Technologies, Inc. (Selete))

https://doi.org/10.7567/SSDM.2006.J-8-5