[J-9-2] Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative- Bias Temperature Instability in HfSiON/SiO2 Gate Stack

Izumi Hirano、Takeshi Yamaguchi、Yuichiro Mitani、Katsuyuki Sekine、Mariko Takayanagi、Kazuhiro Eguchi、Hideki Satake (1.Advanced LSI Technology Laboratory, Corporate R&D Center、2.Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.J-9-2