[P-1-10] Improvement of mobility and NBTI reliability in MOSFETs with ALD-Si-nitride/SiO2 stack dielectrics and p+-poly-Si gate

Shiyang Zhu、Anri Nakajima、Takuo Ohashi、Hideharu Miyake (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Elpida Memory, Inc.)

https://doi.org/10.7567/SSDM.2006.P-1-10