[P-1-14] Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)

Kuei-Shu Chang-Liao, Ping-Hung Tsai, H. Y. Kao, T. K. Wang, S. F. Huang, W. F. Tsai, C. F. Ai (1.Department of Engineering and System Science, National Tsing Hua University, 2.Physics Division, Institution of Nuclear Energy Research)

https://doi.org/10.7567/SSDM.2006.P-1-14