[P-1-14] Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)

Kuei-Shu Chang-Liao、Ping-Hung Tsai、H. Y. Kao、T. K. Wang、S. F. Huang、W. F. Tsai、C. F. Ai (1.Department of Engineering and System Science, National Tsing Hua University、2.Physics Division, Institution of Nuclear Energy Research)

https://doi.org/10.7567/SSDM.2006.P-1-14