[P-1-15] Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors

Heung-Jae Cho, Tae-Yoon Kim, Yong Soo Kim, Se-Aug Jang, Seung Ryong Lee, Kwan-Yong Lim, Min Gyu Sung, Jong-Hyeop Kim, Sang-Won Oh, Tae-Woo Jung, Tae-Kyung Oh, Yun-Taek Hwang, Young-Hoon Kim, Hong-Seon Yang, Jin-Woong Kim (1.R&D Division, Hynix Semiconductor Inc., Ichon P.O.)

https://doi.org/10.7567/SSDM.2006.P-1-15