[P-1-15] Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors

Heung-Jae Cho、Tae-Yoon Kim、Yong Soo Kim、Se-Aug Jang、Seung Ryong Lee、Kwan-Yong Lim、Min Gyu Sung、Jong-Hyeop Kim、Sang-Won Oh、Tae-Woo Jung、Tae-Kyung Oh、Yun-Taek Hwang、Young-Hoon Kim、Hong-Seon Yang、Jin-Woong Kim (1.R&D Division, Hynix Semiconductor Inc., Ichon P.O.)

https://doi.org/10.7567/SSDM.2006.P-1-15