The Japan Society of Applied Physics

[P-1-18] Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes

T. Matsukawa, Y. X. Liu, K. Endo, M. Masahara, K. Ishii, H. Yamauchi, J. Tsukada, E. Suzuki (1.Nanoelectronics Research Institute, AIST)

https://doi.org/10.7567/SSDM.2006.P-1-18