[P-1-18] Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes

T. Matsukawa、Y. X. Liu、K. Endo、M. Masahara、K. Ishii、H. Yamauchi、J. Tsukada、E. Suzuki (1.Nanoelectronics Research Institute, AIST)

https://doi.org/10.7567/SSDM.2006.P-1-18