Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD

Wenwu Wang; Toshihide Nabatame; Yukihiro Shimogaki

doi:https://doi.org/10.7567/SSDM.2006.P-1-20

[P-1-20] Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD

Wenwu Wang, Toshihide Nabatame, Yukihiro Shimogaki (1.Department of Materials Engineering, The University of Tokyo, 2.MIRAI-ASET, AIST, Tsukuba West 7)

https://doi.org/10.7567/SSDM.2006.P-1-20

2006 International Conference on Solid State Devices and Materials

[P-1-20] Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD