[P-1-20] Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD

Wenwu Wang、Toshihide Nabatame、Yukihiro Shimogaki (1.Department of Materials Engineering, The University of Tokyo、2.MIRAI-ASET, AIST, Tsukuba West 7)

https://doi.org/10.7567/SSDM.2006.P-1-20