Low Leakage Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+/B+ Combination I/I and Low Temperature Annealing

Hiroshi Imai; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2006.P-1-27

[P-1-27] Low Leakage Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+/B+ Combination I/I and Low Temperature Annealing

Hiroshi Imai、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2006.P-1-27

2006 International Conference on Solid State Devices and Materials

[P-1-27] Low Leakage Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+/B+ Combination I/I and Low Temperature Annealing