Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation

Jone F. Chen; Dao-Hong Yang; Chih-Yung Lin; Shien-Yang Wu

doi:https://doi.org/10.7567/SSDM.2006.P-3-10

[P-3-10] Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation

Jone F. Chen、Dao-Hong Yang、Chih-Yung Lin、Shien-Yang Wu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University、2.Logic Technology Division/R&D, Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2006.P-3-10

2006 International Conference on Solid State Devices and Materials

[P-3-10] Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation