Modeling of Drain Bias Dependence on Threshold Voltage Shift Under Negative Gate Bias Stress of a-Si:H TFTs

Huai-Yuan Tseng; Ko-Yu Chiang; Chen-Pang Kung

doi:https://doi.org/10.7567/SSDM.2006.P-3-13

[P-3-13] Modeling of Drain Bias Dependence on Threshold Voltage Shift Under Negative Gate Bias Stress of a-Si:H TFTs

Huai-Yuan Tseng、Ko-Yu Chiang、Chen-Pang Kung (1.Flexible Electronics Technology Division/Electronics and Optoelectronics Research Laboratories (EOL)、2.Industrial Technology Research Institute (ITRI))

https://doi.org/10.7567/SSDM.2006.P-3-13

2006 International Conference on Solid State Devices and Materials

[P-3-13] Modeling of Drain Bias Dependence on Threshold Voltage Shift Under Negative Gate Bias Stress of a-Si:H TFTs