A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels : A High Co-Integration Potential

R. Wacquez; R. Cerutti; P. Coronel; A. Cros; D. Fleury; A. Pouydebasque; J. Bustos; S. Harrison; N. Loubet; S. Borel; D. Lenoble; D. Delille; F. Leverd; F. Judong; MP. Samson; N. Vuillet; B. Guillaumot; T. Ernst; P. Masson; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2006.P-3-18

[P-3-18] A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels : A High Co-Integration Potential

R. Wacquez、R. Cerutti、P. Coronel、A. Cros、D. Fleury、A. Pouydebasque、J. Bustos、S. Harrison、N. Loubet、S. Borel、D. Lenoble、D. Delille、F. Leverd、F. Judong、MP. Samson、N. Vuillet、B. Guillaumot、T. Ernst、P. Masson、T. Skotnicki (1.ST Microelectronics、2.L2MP、3.LETI、4.Philips)

https://doi.org/10.7567/SSDM.2006.P-3-18

2006 International Conference on Solid State Devices and Materials

[P-3-18] A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels : A High Co-Integration Potential