[P-3-18] A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels : A High Co-Integration Potential

R. Wacquez, R. Cerutti, P. Coronel, A. Cros, D. Fleury, A. Pouydebasque, J. Bustos, S. Harrison, N. Loubet, S. Borel, D. Lenoble, D. Delille, F. Leverd, F. Judong, MP. Samson, N. Vuillet, B. Guillaumot, T. Ernst, P. Masson, T. Skotnicki (1.ST Microelectronics, 2.L2MP, 3.LETI, 4.Philips)

https://doi.org/10.7567/SSDM.2006.P-3-18