[P-3-3] Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier Stress

Yao-Jen Lee, Chia-Hao Fan, Wen-Yan Lin, Chia-Chen Wan, Bohr-Ran Huang, Wen-Luh Yang, Tien-Sheng Chao, D. S.Chuu (1.National Nano Device Laboratories, 2.Department of Electronic Engineering, Feng Chia University, 3.Department of Electronic Engineering, National Yunlin University of Science and Technology, 4.Department of Electrophysics, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2006.P-3-3