[P-3-3] Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier Stress

Yao-Jen Lee、Chia-Hao Fan、Wen-Yan Lin、Chia-Chen Wan、Bohr-Ran Huang、Wen-Luh Yang、Tien-Sheng Chao、D. S.Chuu (1.National Nano Device Laboratories、2.Department of Electronic Engineering, Feng Chia University、3.Department of Electronic Engineering, National Yunlin University of Science and Technology、4.Department of Electrophysics, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2006.P-3-3