[P-3-4] Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate Electrodes

Kiyoshi Okuyama、Koji Yoshikawa、Hideo Sunami (1.Research Center for Nanodevice and Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.2006.P-3-4