[P-4-12] Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications

D. Ha、J. H. Kim、T. H. An、S. S. Lee、S. H. Jang、S. Y. Kim、M. S. Kang、H. T. Kim、S. H. Lee、M. Y. Sim、W. T. Park、D. H. Han、S. M. Jeon、J. W. Park、S. H. Kim、S. H. Kwon、Y. G. Kim、Y. J. Choi、M. S. Sim、C. H. Cho、M. M. Jeong、T. W. Lee、G. Jin、W. S. Lee、B.-I. Ryu (1.Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2006.P-4-12