[P-4-15L] Very low voltage operation of p-Si/Al2O3/HfO2/TiO2/Al2O3/Pt single quantum well flash memory devices with good retention

S. Maikap、P. J. Tzeng、T.-Y. Wang、S. S. Tseng、C. H. Lin、H. Y. Lee、L. S. Lee、P. W. Li、J.-R. Yang、M.-J. Tsai (1.Department of Electronic Engineering, Chang Gung University、2.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute、3.Department of Material Science Engineering, National Taiwan University、4.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2006.P-4-15L