[P-4-15L] Very low voltage operation of p-Si/Al2O3/HfO2/TiO2/Al2O3/Pt single quantum well flash memory devices with good retention

S. Maikap, P. J. Tzeng, T.-Y. Wang, S. S. Tseng, C. H. Lin, H. Y. Lee, L. S. Lee, P. W. Li, J.-R. Yang, M.-J. Tsai (1.Department of Electronic Engineering, Chang Gung University, 2.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 3.Department of Material Science Engineering, National Taiwan University, 4.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2006.P-4-15L