[P-4-2] FinFET NAND Flash with Nitride/Si Nanocrystal/Nitride Hybrid Trap Layer

Jeong-Dong Choe、Se-Hoon Lee、Jong Jin Lee、Eun Suk Cho、Youngjoon Ahn、Byoung Yong Choi、Suk Kang Sung、Jintae No、Ilsub Chung、Kyucharn Park、Donggun Park (1.Device Research Team, PD Team, Semiconductor R&D Center, Samsung Electronics Co.、2.School of Information and Communication Engineering, Sungkyunkwan University)

https://doi.org/10.7567/SSDM.2006.P-4-2